Low-cost high-quality crystalline germanium based flexible devices

dc.contributor.authorNassar, Joanna M.
dc.contributor.authorHussain, Aftab M.
dc.contributor.authorRojas, Jhonathan Prieto
dc.contributor.authorHussain, Muhammad Mustafa
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.date.accessioned2015-08-03T11:55:22Z
dc.date.available2015-08-03T11:55:22Z
dc.date.issued2014-06-16
dc.date.published-online2014-06-16
dc.date.published-print2014-09
dc.description.abstractHigh performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.
dc.description.sponsorshipWe thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.
dc.identifier.citationNassar, J. M., Hussain, A. M., Rojas, J. P., & Hussain, M. M. (2014). Low-cost high-quality crystalline germanium based flexible devices. Physica Status Solidi (RRL) - Rapid Research Letters, 08(09), 794–800. doi:10.1002/pssr.201409257
dc.identifier.doi10.1002/pssr.201409257
dc.identifier.issn18626254
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Letters
dc.identifier.urihttp://hdl.handle.net/10754/563599
dc.publisherWiley
dc.subjectCMOS
dc.subjectFlexible electronics
dc.subjectGermanium
dc.subjectThin films
dc.titleLow-cost high-quality crystalline germanium based flexible devices
dc.typeArticle
display.details.left<span><h5>Type</h5>Article<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-4463-8877&spc.sf=dc.date.issued&spc.sd=DESC">Nassar, Joanna M.</a> <a href="https://orcid.org/0000-0003-4463-8877" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0002-9516-9428&spc.sf=dc.date.issued&spc.sd=DESC">Hussain, Aftab M.</a> <a href="https://orcid.org/0000-0002-9516-9428" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0001-7848-1121&spc.sf=dc.date.issued&spc.sd=DESC">Rojas, Jhonathan Prieto</a> <a href="https://orcid.org/0000-0001-7848-1121" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-3279-0441&spc.sf=dc.date.issued&spc.sd=DESC">Hussain, Muhammad Mustafa</a> <a href="https://orcid.org/0000-0003-3279-0441" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><br><h5>KAUST Department</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Integrated Nanotechnology Lab,equals">Integrated Nanotechnology Lab</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division,equals">Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Electrical Engineering Program,equals">Electrical Engineering Program</a><br><br><h5>KAUST Grant Number</h5>CRG-1-2012-HUS-008<br><br><h5>Online Publication Date</h5>2014-06-16<br><br><h5>Print Publication Date</h5>2014-09<br><br><h5>Date</h5>2014-06-16</span>
display.details.right<span><h5>Abstract</h5>High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.<br><br><h5>Citation</h5>Nassar, J. M., Hussain, A. M., Rojas, J. P., & Hussain, M. M. (2014). Low-cost high-quality crystalline germanium based flexible devices. Physica Status Solidi (RRL) - Rapid Research Letters, 08(09), 794–800. doi:10.1002/pssr.201409257<br><br><h5>Acknowledgements</h5>We thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=Wiley,equals">Wiley</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=physica status solidi (RRL) - Rapid Research Letters,equals">physica status solidi (RRL) - Rapid Research Letters</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1002/pssr.201409257">10.1002/pssr.201409257</a></span>
kaust.acknowledged.supportUnitKAUST OCRF Competitive Research
kaust.grant.numberCRG-1-2012-HUS-008
kaust.personNassar, Joanna M.
kaust.personHussain, Aftab M.
kaust.personRojas, Jhonathan Prieto
kaust.personHussain, Muhammad Mustafa
orcid.authorNassar, Joanna M.::0000-0003-4463-8877
orcid.authorHussain, Aftab M.::0000-0002-9516-9428
orcid.authorRojas, Jhonathan Prieto::0000-0001-7848-1121
orcid.authorHussain, Muhammad Mustafa::0000-0003-3279-0441
orcid.id0000-0003-3279-0441
orcid.id0000-0001-7848-1121
orcid.id0000-0002-9516-9428
orcid.id0000-0003-4463-8877
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