Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires

dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.contributor.authorPriante, Davide
dc.contributor.authorElafandy, Rami T.
dc.contributor.authorPrabaswara, Aditya
dc.contributor.authorJanjua, Bilal
dc.contributor.authorZhao, Chao
dc.contributor.authorAlias, Mohd Sharizal
dc.contributor.authorTangi, Malleswararao
dc.contributor.authorAlaskar, Yazeed
dc.contributor.authorAlbadri, Abdulrahman M.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086, Saudi Arabia
dc.date.accessioned2018-07-08T11:16:10Z
dc.date.available2018-07-08T11:16:10Z
dc.date.issued2018-07-05
dc.date.published-online2018-07-05
dc.date.published-print2018-07-07
dc.description.abstractThe diode junction temperature (Tj) of light emitting devices is a key parameter affecting the efficiency, output power, and reliability. Herein, we present experimental measurements of the Tj on ultraviolet (UV) AlGaN nanowire (NW) light emitting diodes (LEDs), grown on a thin metal-film and silicon substrate using the diode forward voltage and electroluminescence peak-shift methods. The forward-voltage vs temperature curves show temperature coefficient dVF/dT values of −6.3 mV/°C and −5.2 mV/°C, respectively. The significantly smaller Tj of ∼61 °C is measured for the sample on the metal substrate, as compared to that of the sample on silicon (∼105 °C), at 50 mA, which results from the better electrical-to-optical energy conversion and the absence of the thermally insulating SiNx at the NWs/silicon interface. In contrast to the reported higher Tj values for AlGaN planar LEDs exhibiting low lateral and vertical heat dissipation, we obtained a relatively lower Tj at similar values of injection current. Lower temperatures are also achieved using an Infrared camera, confirming that the Tj reaches higher values than the overall device temperature. Furthermore, the heat source density is simulated and compared to experimental data. This work provides insight into addressing the high junction temperature limitations in light-emitters, by using a highly conductive thin metal substrate, and it aims to realize UV AlGaN NWs for high power and reliable emitting devices.
dc.description.sponsorshipWe acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, No. BAS/1/1614-01-01 and MBE equipment funding No. C/M-20000-12-001-77.
dc.eprint.versionPublisher's Version/PDF
dc.identifier.citationPriante, D., Elafandy, R. T., Prabaswara, A., Janjua, B., Zhao, C., Alias, M. S., … Ooi, B. S. (2018). Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires. Journal of Applied Physics, 124(1), 015702. doi:10.1063/1.5026650
dc.identifier.doi10.1063/1.5026650
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.journalJournal of Applied Physics
dc.identifier.urihttp://hdl.handle.net/10754/628037
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttps://aip.scitation.org/doi/10.1063/1.5026650
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
dc.source.beginpage015702
dc.source.issue1
dc.source.journaltitleJournal of Applied Physics
dc.source.volume124
dc.titleDiode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires
dc.typeArticle
display.details.left<span><h5>Type</h5>Article<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-4540-2188&spc.sf=dc.date.issued&spc.sd=DESC">Priante, Davide</a> <a href="https://orcid.org/0000-0003-4540-2188" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0002-8529-2967&spc.sf=dc.date.issued&spc.sd=DESC">Elafandy, Rami T.</a> <a href="https://orcid.org/0000-0002-8529-2967" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-1892-671X&spc.sf=dc.date.issued&spc.sd=DESC">Prabaswara, Aditya</a> <a href="https://orcid.org/0000-0003-1892-671X" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0001-9974-9879&spc.sf=dc.date.issued&spc.sd=DESC">Janjua, Bilal</a> <a href="https://orcid.org/0000-0001-9974-9879" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0002-9582-1068&spc.sf=dc.date.issued&spc.sd=DESC">Zhao, Chao</a> <a href="https://orcid.org/0000-0002-9582-1068" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-1369-1421&spc.sf=dc.date.issued&spc.sd=DESC">Alias, Mohd Sharizal</a> <a href="https://orcid.org/0000-0003-1369-1421" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-1141-4324&spc.sf=dc.date.issued&spc.sd=DESC">Tangi, Malleswararao</a> <a href="https://orcid.org/0000-0003-1141-4324" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Alaskar, Yazeed,equals">Alaskar, Yazeed</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Albadri, Abdulrahman M.,equals">Albadri, Abdulrahman M.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Alyamani, Ahmed Y.,equals">Alyamani, Ahmed Y.</a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0002-1480-6975&spc.sf=dc.date.issued&spc.sd=DESC">Ng, Tien Khee</a> <a href="https://orcid.org/0000-0002-1480-6975" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0001-9606-5578&spc.sf=dc.date.issued&spc.sd=DESC">Ooi, Boon S.</a> <a href="https://orcid.org/0000-0001-9606-5578" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><br><h5>KAUST Department</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Photonics Laboratory,equals">Photonics Laboratory</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division,equals">Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division</a><br><br><h5>Online Publication Date</h5>2018-07-05<br><br><h5>Print Publication Date</h5>2018-07-07<br><br><h5>Date</h5>2018-07-05</span>
display.details.right<span><h5>Abstract</h5>The diode junction temperature (Tj) of light emitting devices is a key parameter affecting the efficiency, output power, and reliability. Herein, we present experimental measurements of the Tj on ultraviolet (UV) AlGaN nanowire (NW) light emitting diodes (LEDs), grown on a thin metal-film and silicon substrate using the diode forward voltage and electroluminescence peak-shift methods. The forward-voltage vs temperature curves show temperature coefficient dVF/dT values of −6.3 mV/°C and −5.2 mV/°C, respectively. The significantly smaller Tj of ∼61 °C is measured for the sample on the metal substrate, as compared to that of the sample on silicon (∼105 °C), at 50 mA, which results from the better electrical-to-optical energy conversion and the absence of the thermally insulating SiNx at the NWs/silicon interface. In contrast to the reported higher Tj values for AlGaN planar LEDs exhibiting low lateral and vertical heat dissipation, we obtained a relatively lower Tj at similar values of injection current. Lower temperatures are also achieved using an Infrared camera, confirming that the Tj reaches higher values than the overall device temperature. Furthermore, the heat source density is simulated and compared to experimental data. This work provides insight into addressing the high junction temperature limitations in light-emitters, by using a highly conductive thin metal substrate, and it aims to realize UV AlGaN NWs for high power and reliable emitting devices.<br><br><h5>Citation</h5>Priante, D., Elafandy, R. T., Prabaswara, A., Janjua, B., Zhao, C., Alias, M. S., … Ooi, B. S. (2018). Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires. Journal of Applied Physics, 124(1), 015702. doi:10.1063/1.5026650<br><br><h5>Acknowledgements</h5>We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, No. BAS/1/1614-01-01 and MBE equipment funding No. C/M-20000-12-001-77.<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=AIP Publishing,equals">AIP Publishing</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=Journal of Applied Physics,equals">Journal of Applied Physics</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1063/1.5026650">10.1063/1.5026650</a><br><br><h5>Additional Links</h5>https://aip.scitation.org/doi/10.1063/1.5026650</span>
orcid.authorPriante, Davide::0000-0003-4540-2188
orcid.authorElafandy, Rami T.::0000-0002-8529-2967
orcid.authorPrabaswara, Aditya::0000-0003-1892-671X
orcid.authorJanjua, Bilal::0000-0001-9974-9879
orcid.authorZhao, Chao::0000-0002-9582-1068
orcid.authorAlias, Mohd Sharizal::0000-0003-1369-1421
orcid.authorTangi, Malleswararao::0000-0003-1141-4324
orcid.authorAlaskar, Yazeed
orcid.authorAlbadri, Abdulrahman M.
orcid.authorAlyamani, Ahmed Y.
orcid.authorNg, Tien Khee::0000-0002-1480-6975
orcid.authorOoi, Boon S.::0000-0001-9606-5578
orcid.id0000-0001-9606-5578
orcid.id0000-0002-1480-6975
orcid.id0000-0003-1141-4324
orcid.id0000-0003-1369-1421
orcid.id0000-0002-9582-1068
orcid.id0000-0001-9974-9879
orcid.id0000-0003-1892-671X
orcid.id0000-0002-8529-2967
orcid.id0000-0003-4540-2188
refterms.dateFOA2018-07-08T11:16:10Z
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