Spin—Based voltage comparator using spin-hall effect driven nanomagnets

Type
Article

Authors
Wasef, S.
Fariborzi, Hossein

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program

Online Publication Date
2020-03-13

Print Publication Date
2020-03-01

Date
2020-03-13

Submitted Date
2019-10-31

Abstract
In this work, we propose a spin-based voltage comparator using a hybrid spin-CMOS circuit model. In particular, we use a 3T-MTJ (three-terminal magnetic tunnel junction) model with an in-plane magnetic anisotropy (IMA) free layer employing a spin-orbit torque (SOT) based writing scheme in the thermal activation regime to demonstrate a comparator circuit with a resolution close to 50mV. The 3T-MTJ model of the comparator was validated against existing experimental results. In addition, we analyze the delay performance of the comparator along with matching the switching delay of the MTJ with an analytical model. We also discuss potential extensions to the model and general directions for future work. I. INTRODUCTION

Citation
Wasef, S., & Fariborzi, H. (2020). Spin—Based voltage comparator using spin-hall effect driven nanomagnets. AIP Advances, 10(3), 035116. doi:10.1063/1.5130491

Publisher
AIP Publishing

Journal
AIP Advances

DOI
10.1063/1.5130491

Additional Links
http://aip.scitation.org/doi/10.1063/1.5130491

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