Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

Abstract
Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

Citation
ElAfandy, R. T., Tien Khee Ng, Yang, Y., Dongkyu Cha, Bei Zhang, Lan Zhao, … Ooi, B. S. (2011). Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots. 8th International Conference on High-Capacity Optical Networks and Emerging Technologies. doi:10.1109/honet.2011.6149817

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
8th International Conference on High-capacity Optical Networks and Emerging Technologies

Conference/Event Name
8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011

DOI
10.1109/HONET.2011.6149817

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