Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

Abstract
Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

Citation
Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films 2016, 119 (6):065301 Journal of Applied Physics

Publisher
AIP Publishing

Journal
Journal of Applied Physics

DOI
10.1063/1.4941434

Additional Links
http://scitation.aip.org/content/aip/journal/jap/119/6/10.1063/1.4941434

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