Out-of-plane strain effect on silicon-based flexible FinFETs

Abstract
Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.

Citation
Ghoneim, M. T., Alfaraj, N., Torres Sevilla, G. A., Fahad, H. M., & Hussain, M. M. (2015). Out-of-plane strain effect on silicon-based flexible FinFETs. 2015 73rd Annual Device Research Conference (DRC). doi:10.1109/drc.2015.7175572

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
2015 73rd Annual Device Research Conference (DRC)

Conference/Event Name
2015 73rd Annual Device Research Conference (DRC)

DOI
10.1109/DRC.2015.7175572

Additional Links
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7175572

Permanent link to this record