Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

Type
Article

Authors
Sun, Jian
Kosel, Jürgen

KAUST Department
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Sensing, Magnetism and Microsystems Lab

Online Publication Date
2012-06-07

Print Publication Date
2012-06-04

Date
2012-06-07

Abstract
An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.

Citation
Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor 2012, 100 (23):232407 Applied Physics Letters

Publisher
AIP Publishing

Journal
Applied Physics Letters

DOI
10.1063/1.4726431

Additional Links
http://scitation.aip.org/content/aip/journal/apl/100/23/10.1063/1.4726431

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