High performance flexible CMOS SOI FinFETs

Abstract
We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today's traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world's highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

Citation
Fahad, H., Sevilla, G. T., Ghoneim, M., & Hussain, M. M. (2014). High performance flexible CMOS SOI FinFETs. 72nd Device Research Conference. doi:10.1109/drc.2014.6872382

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
72nd Device Research Conference

Conference/Event Name
72nd Device Research Conference, DRC 2014

DOI
10.1109/DRC.2014.6872382

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