Electronic Devices within Single Atomic Layer - Development of 2D Lateral Junctions

dc.contributor.authorHe, Jr-Hau
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
dc.contributor.departmentElectrical and Computer Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentNano Energy Lab
dc.date.accessioned2021-09-01T08:13:25Z
dc.date.available2021-09-01T08:13:25Z
dc.date.issued2019-08-19
dc.description.abstractWith the demanding requirement of nanotechnology in the semiconducting industry, the challenge will become unprecedented as the fabrication approaches the scaling limit in the next few years. The rise of 2D materials seems to be a probable solution for developing the next-generation semiconducting devices. As 2D lateral junctions bring a revolutionary breakthrough in the past few years, nanoscale sized devices are no longer limited to the vertical direction. Doping and structural design strategies that are totally different from conventional Si based devices can bring about more ideal and ultra-efficient electronic and optoelectronic devices. This perspective summarizes and compares different methods of 2D lateral junction designs (including electrostatic tunable p-n homojunction and direct growth of in-plane p-n heterojunction) and various material combinations (including metallic-insulating, semiconducting p-n, and ohmic junctions). In addition, examples of design strategies and what can be achieved by adopting these 2D lateral junctions have been provided to show the promising potential for the future development. It can be expected that over the next few years, 2D materials will dominate the semiconducting industry and holds the promise for keeping the Moore’s law alive.
dc.eprint.versionPre-print
dc.identifier.citationHe, J.-H. (2019). Electronic Devices within Single Atomic Layer - Development of 2D Lateral Junctions. 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). doi:10.1109/vlsi-tsa.2019.8804651
dc.identifier.doi10.1109/vlsi-tsa.2019.8804651
dc.identifier.issn1930-8868
dc.identifier.urihttp://hdl.handle.net/10754/670887
dc.identifier.wosutWOS:000503374900065
dc.publisherIEEE
dc.relation.urlhttps://www.cityu.edu.hk/bme/pdf/mbeseminar1718_013.pdf
dc.relation.urlhttps://www.cityu.edu.hk/bme/pdf/mbeseminar1718_013.pdf
dc.rightsThis is an accepted manuscript version of a paper before final publisher editing and formatting. Archived with thanks to IEEE.
dc.rightsThis file is an open access version redistributed from: https://www.cityu.edu.hk/bme/pdf/mbeseminar1718_013.pdf
dc.titleElectronic Devices within Single Atomic Layer - Development of 2D Lateral Junctions
dc.typeConference Paper
display.details.left<span><h5>Type</h5>Conference Paper<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-1886-9241&spc.sf=dc.date.issued&spc.sd=DESC">He, Jr-Hau</a> <a href="https://orcid.org/0000-0003-1886-9241" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><br><h5>KAUST Department</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division,equals">Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Electrical and Computer Engineering Program,equals">Electrical and Computer Engineering Program</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=KAUST Solar Center (KSC),equals">KAUST Solar Center (KSC)</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Nano Energy Lab,equals">Nano Energy Lab</a><br><br><h5>Date</h5>2019-08-19</span>
display.details.right<span><h5>Abstract</h5>With the demanding requirement of nanotechnology in the semiconducting industry, the challenge will become unprecedented as the fabrication approaches the scaling limit in the next few years. The rise of 2D materials seems to be a probable solution for developing the next-generation semiconducting devices. As 2D lateral junctions bring a revolutionary breakthrough in the past few years, nanoscale sized devices are no longer limited to the vertical direction. Doping and structural design strategies that are totally different from conventional Si based devices can bring about more ideal and ultra-efficient electronic and optoelectronic devices. This perspective summarizes and compares different methods of 2D lateral junction designs (including electrostatic tunable p-n homojunction and direct growth of in-plane p-n heterojunction) and various material combinations (including metallic-insulating, semiconducting p-n, and ohmic junctions). In addition, examples of design strategies and what can be achieved by adopting these 2D lateral junctions have been provided to show the promising potential for the future development. It can be expected that over the next few years, 2D materials will dominate the semiconducting industry and holds the promise for keeping the Moore’s law alive.<br><br><h5>Citation</h5>He, J.-H. (2019). Electronic Devices within Single Atomic Layer - Development of 2D Lateral Junctions. 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). doi:10.1109/vlsi-tsa.2019.8804651<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=IEEE,equals">IEEE</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1109/vlsi-tsa.2019.8804651">10.1109/vlsi-tsa.2019.8804651</a><br><br><h5>Additional Links</h5>https://www.cityu.edu.hk/bme/pdf/mbeseminar1718_013.pdfhttps://www.cityu.edu.hk/bme/pdf/mbeseminar1718_013.pdf</span>
kaust.personHe, Jr-Hau
orcid.authorHe, Jr-Hau::0000-0003-1886-9241
orcid.id0000-0003-1886-9241
refterms.dateFOA2023-02-02T11:18:01Z
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