High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.contributor.authorMumthaz Muhammed, Mufasila
dc.contributor.authorPeres, M.
dc.contributor.authorYamashita, Y.
dc.contributor.authorMorishima, Y.
dc.contributor.authorSato, S.
dc.contributor.authorFranco, N.
dc.contributor.authorLorenz, K.
dc.contributor.authorKuramata, A.
dc.contributor.authorRoqan, Iman S.
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.contributor.institutionIPFN, Instituto Superior Técnico (IST), Campus Tecnológico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal
dc.contributor.institutionTamura Corporation, Sayama, Saitama 350-1328, Japan
dc.contributor.institutionTamura Corporation, Sayama, Saitama 350-1328, Japan
dc.contributor.institutionTamura Corporation, Sayama, Saitama 350-1328, Japan
dc.contributor.institutionIPFN, Instituto Superior Técnico (IST), Campus Tecnológico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal
dc.contributor.institutionIPFN, Instituto Superior Técnico (IST), Campus Tecnológico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal
dc.contributor.institutionTamura Corporation, Sayama, Saitama 350-1328, Japan
dc.date.accessioned2015-03-17T06:04:41Z
dc.date.available2015-03-17T06:04:41Z
dc.date.issued2014-07-28
dc.description.abstractProducing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.
dc.eprint.versionPublisher's Version/PDF
dc.identifier.citationHigh optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3 2014, 105 (4):042112 Applied Physics Letters
dc.identifier.doi10.1063/1.4891761
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.journalApplied Physics Letters
dc.identifier.urihttp://hdl.handle.net/10754/346723
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/105/4/10.1063/1.4891761
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleHigh optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3
dc.typeArticle
display.details.left<span><h5>Type</h5>Article<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0002-0826-7047&spc.sf=dc.date.issued&spc.sd=DESC">Mumthaz Muhammed, Mufasila</a> <a href="https://orcid.org/0000-0002-0826-7047" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Peres, M.,equals">Peres, M.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Yamashita, Y.,equals">Yamashita, Y.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Morishima, Y.,equals">Morishima, Y.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Sato, S.,equals">Sato, S.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Franco, N.,equals">Franco, N.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Lorenz, K.,equals">Lorenz, K.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Kuramata, A.,equals">Kuramata, A.</a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0001-7442-4330&spc.sf=dc.date.issued&spc.sd=DESC">Roqan, Iman S.</a> <a href="https://orcid.org/0000-0001-7442-4330" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><br><h5>KAUST Department</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Material Science and Engineering Program,equals">Material Science and Engineering Program</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Physical Science and Engineering (PSE) Division,equals">Physical Science and Engineering (PSE) Division</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Semiconductor and Material Spectroscopy (SMS) Laboratory,equals">Semiconductor and Material Spectroscopy (SMS) Laboratory</a><br><br><h5>Date</h5>2014-07-28</span>
display.details.right<span><h5>Abstract</h5>Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.<br><br><h5>Citation</h5>High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3 2014, 105 (4):042112 Applied Physics Letters<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=AIP Publishing,equals">AIP Publishing</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=Applied Physics Letters,equals">Applied Physics Letters</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1063/1.4891761">10.1063/1.4891761</a><br><br><h5>Additional Links</h5>http://scitation.aip.org/content/aip/journal/apl/105/4/10.1063/1.4891761</span>
kaust.personRoqan, Iman S.
kaust.personMumthaz Muhammed, Mufasila
orcid.authorMumthaz Muhammed, Mufasila::0000-0002-0826-7047
orcid.authorPeres, M.
orcid.authorYamashita, Y.
orcid.authorMorishima, Y.
orcid.authorSato, S.
orcid.authorFranco, N.
orcid.authorLorenz, K.
orcid.authorKuramata, A.
orcid.authorRoqan, Iman S.::0000-0001-7442-4330
orcid.id0000-0001-7442-4330
orcid.id0000-0002-0826-7047
refterms.dateFOA2018-06-13T16:14:38Z
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