Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.contributor.authorChang, Yung-Huang
dc.contributor.authorZhang, Wenjing
dc.contributor.authorZhu, Yihan
dc.contributor.authorHan, Yu
dc.contributor.authorPu, Jiang
dc.contributor.authorChang, Jan-Kai
dc.contributor.authorHsu, Wei-Ting
dc.contributor.authorHuang, Jing-Kai
dc.contributor.authorHsu, Chang-Lung
dc.contributor.authorChiu, Ming-Hui
dc.contributor.authorTakenobu, Taishi
dc.contributor.authorLi, Henan
dc.contributor.authorWu, Chih-I
dc.contributor.authorChang, Wen-Hao
dc.contributor.authorWee, Andrew Thye Shen
dc.contributor.authorLi, Lain-Jong
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Center
dc.contributor.departmentChemical Science Program
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanostructured Functional Materials (NFM) laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.date.accessioned2015-01-20T06:16:22Z
dc.date.available2015-01-20T06:16:22Z
dc.date.issued2014-08-07
dc.date.published-online2014-08-07
dc.date.published-print2014-08-26
dc.description.abstractMonolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.
dc.eprint.versionPost-print
dc.identifier.citationMonolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection 2014, 8 (8):8582 ACS Nano
dc.identifier.doi10.1021/nn503287m
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.journalACS Nano
dc.identifier.urihttp://hdl.handle.net/10754/338571
dc.language.isoen
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/nn503287m
dc.rightsArchived with thanks to ACS Nano
dc.subjectTransition metal dichalcogenides
dc.subjectPhotoresponse
dc.subjectMoSe2
dc.subjectMoS2
dc.subject2D Materials
dc.titleMonolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection
dc.typeArticle
display.details.left<span><h5>Type</h5>Article<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Chang, Yung-Huang,equals">Chang, Yung-Huang</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Zhang, Wenjing,equals">Zhang, Wenjing</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Zhu, Yihan,equals">Zhu, Yihan</a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-1462-1118&spc.sf=dc.date.issued&spc.sd=DESC">Han, Yu</a> <a href="https://orcid.org/0000-0003-1462-1118" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Pu, Jiang,equals">Pu, Jiang</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Chang, Jan-Kai,equals">Chang, Jan-Kai</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Hsu, Wei-Ting,equals">Hsu, Wei-Ting</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Huang, Jing-Kai,equals">Huang, Jing-Kai</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Hsu, Chang-Lung,equals">Hsu, Chang-Lung</a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-3753-8149&spc.sf=dc.date.issued&spc.sd=DESC">Chiu, Ming-Hui</a> <a href="https://orcid.org/0000-0003-3753-8149" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Takenobu, Taishi,equals">Takenobu, Taishi</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Li, Henan,equals">Li, Henan</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Wu, Chih-I,equals">Wu, Chih-I</a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-4880-6006&spc.sf=dc.date.issued&spc.sd=DESC">Chang, Wen-Hao</a> <a href="https://orcid.org/0000-0003-4880-6006" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Wee, Andrew Thye Shen,equals">Wee, Andrew Thye Shen</a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0002-4059-7783&spc.sf=dc.date.issued&spc.sd=DESC">Li, Lain-Jong</a> <a href="https://orcid.org/0000-0002-4059-7783" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><br><h5>KAUST Department</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Advanced Membranes and Porous Materials Research Center,equals">Advanced Membranes and Porous Materials Research Center</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Chemical Science Program,equals">Chemical Science Program</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Material Science and Engineering Program,equals">Material Science and Engineering Program</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Nanostructured Functional Materials (NFM) laboratory,equals">Nanostructured Functional Materials (NFM) laboratory</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Physical Science and Engineering (PSE) Division,equals">Physical Science and Engineering (PSE) Division</a><br><br><h5>Online Publication Date</h5>2014-08-07<br><br><h5>Print Publication Date</h5>2014-08-26<br><br><h5>Date</h5>2014-08-07</span>
display.details.right<span><h5>Abstract</h5>Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.<br><br><h5>Citation</h5>Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection 2014, 8 (8):8582 ACS Nano<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=American Chemical Society (ACS),equals">American Chemical Society (ACS)</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=ACS Nano,equals">ACS Nano</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1021/nn503287m">10.1021/nn503287m</a><br><br><h5>Additional Links</h5>http://pubs.acs.org/doi/abs/10.1021/nn503287m</span>
kaust.personZhu, Yihan
kaust.personHan, Yu
kaust.personLi, Lain-Jong
kaust.personChiu, Ming-Hui
orcid.authorChang, Yung-Huang
orcid.authorZhang, Wenjing
orcid.authorZhu, Yihan
orcid.authorHan, Yu::0000-0003-1462-1118
orcid.authorPu, Jiang
orcid.authorChang, Jan-Kai
orcid.authorHsu, Wei-Ting
orcid.authorHuang, Jing-Kai
orcid.authorHsu, Chang-Lung
orcid.authorChiu, Ming-Hui::0000-0003-3753-8149
orcid.authorTakenobu, Taishi
orcid.authorLi, Henan
orcid.authorWu, Chih-I
orcid.authorChang, Wen-Hao::0000-0003-4880-6006
orcid.authorWee, Andrew Thye Shen
orcid.authorLi, Lain-Jong::0000-0002-4059-7783
orcid.id0000-0002-4059-7783
orcid.id0000-0003-4880-6006
orcid.id0000-0003-3753-8149
orcid.id0000-0003-1462-1118
refterms.dateFOA2015-08-26T00:00:00Z
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