Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

dc.contributor.authorShen, Chao
dc.contributor.authorKang, Chun Hong
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentPhotonics Laboratory
dc.date.accessioned2013-12-28T15:41:57Z
dc.date.available2013-12-28T15:41:57Z
dc.date.issued2013
dc.description.abstractThe mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.
dc.eprint.versionPublisher's Version/PDF
dc.identifier.citationC. Shen, T. K. Ng, C. H. Kang, and B. S. Ooi, "Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper AW3K.3, Beijing, China.
dc.identifier.doi10.1364/ACPC.2013.AW3K.3
dc.identifier.isbn978-1- 55752-989-3
dc.identifier.journalOSA Technical Digest (online)
dc.identifier.urihttp://hdl.handle.net/10754/310650
dc.language.isoen
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-AW3K.3
dc.titleMesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs
dc.typeConference Paper
display.details.left<span><h5>Type</h5>Conference Paper<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-2860-8897&spc.sf=dc.date.issued&spc.sd=DESC">Shen, Chao</a> <a href="https://orcid.org/0000-0003-2860-8897" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Kang, Chun Hong,equals">Kang, Chun Hong</a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0002-1480-6975&spc.sf=dc.date.issued&spc.sd=DESC">Ng, Tien Khee</a> <a href="https://orcid.org/0000-0002-1480-6975" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0001-9606-5578&spc.sf=dc.date.issued&spc.sd=DESC">Ooi, Boon S.</a> <a href="https://orcid.org/0000-0001-9606-5578" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><br><h5>KAUST Department</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division,equals">Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Photonics Laboratory,equals">Photonics Laboratory</a><br><br><h5>Date</h5>2013</span>
display.details.right<span><h5>Abstract</h5>The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.<br><br><h5>Citation</h5>C. Shen, T. K. Ng, C. H. Kang, and B. S. Ooi, "Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs," in Asia Communications and Photonics (ACP) Conference 2013, OSA Technical Digest (online), paper AW3K.3, Beijing, China.<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=The Optical Society,equals">The Optical Society</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=OSA Technical Digest (online),equals">OSA Technical Digest (online)</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1364/ACPC.2013.AW3K.3">10.1364/ACPC.2013.AW3K.3</a><br><br><h5>Additional Links</h5>https://www.osapublishing.org/abstract.cfm?uri=ACPC-2013-AW3K.3</span>
orcid.authorShen, Chao::0000-0003-2860-8897
orcid.authorKang, Chun Hong
orcid.authorNg, Tien Khee::0000-0002-1480-6975
orcid.authorOoi, Boon S.::0000-0001-9606-5578
orcid.id0000-0001-9606-5578
orcid.id0000-0002-1480-6975
orcid.id0000-0003-2860-8897
refterms.dateFOA2018-06-13T17:45:16Z
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
ACP-2013-AW3K.3.pdf
Size:
420.04 KB
Format:
Adobe Portable Document Format
Description:
CShen_ACP2013
License bundle
Now showing 1 - 1 of 1
Name:
license.txt
Size:
1.66 KB
Format:
Item-specific license agreed upon to submission
Description: