Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching

dc.contributor.authorNajar, Adel
dc.contributor.authorShafa, Muhammad
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.institutionDepartment of Physics, College of Science, United Arab Emirates University, Al Ain 15505, United Arab Emirates
dc.date.accessioned2017-04-30T10:17:02Z
dc.date.available2017-04-30T10:17:02Z
dc.date.issued2017
dc.description.abstractHerein, we report on the studies of GaN nanowires (GaN NWs) prepared via a metal-assisted photochemical electroless etching method with Pt as the catalyst. It has been found that etching time greatly influences the growth of GaN NWs. The density and the length of nanowires increased with longer etching time, and excellent substrate coverage was observed. The average nanowire width and length are around 35 nm and 10 μm, respectively. Transmission electron microscopy (TEM) shows a single-crystalline wurtzite structure and is confirmed by X-ray measurements. The synthesis mechanism of GaN NWs using the metal-assisted photochemical electroless etching method was presented. Photoluminescence (PL) measurements of GaN NWs show red-shift PL peaks compared to the as-grown sample associated with the relaxation of compressive stress. Furthermore, a shift of the E2 peak to the lower frequency in the Raman spectra for the samples etched for a longer time confirms such a stress relaxation. Based on Raman measurements, the compressive stress σxx and the residual strain εxx were evaluated to be 0.23 GPa and 2.6 × 10−4, respectively. GaN NW synthesis using a low cost method might be used for the fabrication of power optoelectronic devices and gas sensors.
dc.description.sponsorshipThe authors acknowledge the financial support from the UAE University under Stat-up project No. 31S214.
dc.eprint.versionPublisher's Version/PDF
dc.identifier.citationNajar A, Shafa M, Anjum D (2017) Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching. RSC Adv 7: 21697–21702. Available: http://dx.doi.org/10.1039/c7ra02348k.
dc.identifier.doi10.1039/c7ra02348k
dc.identifier.issn2046-2069
dc.identifier.journalRSC Advances
dc.identifier.urihttp://hdl.handle.net/10754/623298
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2017/RA/C7RA02348K#!divAbstract
dc.rightsThis article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/
dc.titleSynthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching
dc.typeArticle
display.details.left<span><h5>License</h5>https://creativecommons.org/licenses/by/3.0/<br><br><h5>Type</h5>Article<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0001-6846-7692&spc.sf=dc.date.issued&spc.sd=DESC">Najar, Adel</a> <a href="https://orcid.org/0000-0001-6846-7692" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Shafa, Muhammad,equals">Shafa, Muhammad</a><br><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0003-2336-2859&spc.sf=dc.date.issued&spc.sd=DESC">Anjum, Dalaver H.</a> <a href="https://orcid.org/0000-0003-2336-2859" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><br><h5>KAUST Department</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Electron Microscopy,equals">Electron Microscopy</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Imaging and Characterization Core Lab,equals">Imaging and Characterization Core Lab</a><br><br><h5>Date</h5>2017</span>
display.details.right<span><h5>Abstract</h5>Herein, we report on the studies of GaN nanowires (GaN NWs) prepared via a metal-assisted photochemical electroless etching method with Pt as the catalyst. It has been found that etching time greatly influences the growth of GaN NWs. The density and the length of nanowires increased with longer etching time, and excellent substrate coverage was observed. The average nanowire width and length are around 35 nm and 10 μm, respectively. Transmission electron microscopy (TEM) shows a single-crystalline wurtzite structure and is confirmed by X-ray measurements. The synthesis mechanism of GaN NWs using the metal-assisted photochemical electroless etching method was presented. Photoluminescence (PL) measurements of GaN NWs show red-shift PL peaks compared to the as-grown sample associated with the relaxation of compressive stress. Furthermore, a shift of the E2 peak to the lower frequency in the Raman spectra for the samples etched for a longer time confirms such a stress relaxation. Based on Raman measurements, the compressive stress σxx and the residual strain εxx were evaluated to be 0.23 GPa and 2.6 × 10−4, respectively. GaN NW synthesis using a low cost method might be used for the fabrication of power optoelectronic devices and gas sensors.<br><br><h5>Citation</h5>Najar A, Shafa M, Anjum D (2017) Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching. RSC Adv 7: 21697–21702. Available: http://dx.doi.org/10.1039/c7ra02348k.<br><br><h5>Acknowledgements</h5>The authors acknowledge the financial support from the UAE University under Stat-up project No. 31S214.<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=Royal Society of Chemistry (RSC),equals">Royal Society of Chemistry (RSC)</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=RSC Advances,equals">RSC Advances</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1039/c7ra02348k">10.1039/c7ra02348k</a><br><br><h5>Additional Links</h5>http://pubs.rsc.org/en/Content/ArticleLanding/2017/RA/C7RA02348K#!divAbstract</span>
kaust.personAnjum, Dalaver H.
orcid.authorNajar, Adel::0000-0001-6846-7692
orcid.authorShafa, Muhammad
orcid.authorAnjum, Dalaver H.::0000-0003-2336-2859
orcid.id0000-0003-2336-2859
orcid.id0000-0001-6846-7692
refterms.dateFOA2018-06-13T13:22:07Z
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