Materials Meets Concepts in Molecule-Based Electronics

dc.contributor.authorOrtmann, Frank
dc.contributor.authorRadke, K. Sebastian
dc.contributor.authorGünther, Alrun
dc.contributor.authorKasemann, Daniel
dc.contributor.authorLeo, Karl
dc.contributor.authorCuniberti, Gianaurelio
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.institutionInstitute for Materials Science; Max Bergmann Center of Biomaterials and Dresden Center for Computational Materials Science; Technische Universität Dresden; 01062 Dresden Germany
dc.contributor.institutionCenter for Advancing Electronics Dresden; TU Dresden; 01062 Dresden Germany
dc.contributor.institutionInstitut für Angewandte Photophysik; TU Dresden; George-Bähr-Str., 1 01069 Dresden Germany
dc.date.accessioned2016-01-19T13:22:33Z
dc.date.available2016-01-19T13:22:33Z
dc.date.issued2014-10-14
dc.date.published-online2014-10-14
dc.date.published-print2015-04
dc.description.abstractIn this contribution, molecular materials are highlighted as an important topic in the diverse field of condensed matter physics, with focus on their particular electronic and transport properties. A better understanding of their performance in various applications and devices demands for an extension of basic theoretical approaches to describe charge transport in molecular materials, including the accurate description of electron-phonon coupling. Starting with the simplest case of a molecular junction and moving on to larger aggregates of bulk organic semiconductors, charge-transport regimes from ballistic motion to incoherent hopping, which are frequently encountered in molecular systems under respective conditions, are discussed. Transport features of specific materials are described through ab initio material parameters whose determination is addressed. © 2014 Wiley-VCH Verlag GmbH & Co. KGaA.
dc.description.sponsorshipThis work is partly based on original research of H. Kleemann, D. Nozaki, and K. Hannewald. The authors gratefully acknowledge fruitful discussions with all of them. F.O. would like to thank the DFG for financial support within the Emmy-Noether funding scheme and A.G. thanks the Dr. Isolde-Dietrich-Stiftung for its financial support. This work was partly supported by the DFG within the Cluster of Excellence "Center for Advancing Electronics Dresden". The authors acknowledge the Center for Information Services and High Performance Computing (ZIH) at TU Dresden for computational resources.
dc.identifier.citationOrtmann F, Radke KS, Günther A, Kasemann D, Leo K, et al. (2014) Materials Meets Concepts in Molecule-Based Electronics. Advanced Functional Materials 25: 1933–1954. Available: http://dx.doi.org/10.1002/adfm.201402334.
dc.identifier.doi10.1002/adfm.201402334
dc.identifier.issn1616-301X
dc.identifier.journalAdvanced Functional Materials
dc.identifier.urihttp://hdl.handle.net/10754/594142
dc.publisherWiley
dc.subjectcharge transport
dc.subjectelectron-phonon coupling
dc.subjectmolecular electronics
dc.subjectorganic field-effect transistors
dc.subjectorganic semiconductors
dc.titleMaterials Meets Concepts in Molecule-Based Electronics
dc.typeArticle
display.details.left<span><h5>Type</h5>Article<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Ortmann, Frank,equals">Ortmann, Frank</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Radke, K. Sebastian,equals">Radke, K. Sebastian</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Günther, Alrun,equals">Günther, Alrun</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Kasemann, Daniel,equals">Kasemann, Daniel</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Leo, Karl,equals">Leo, Karl</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Cuniberti, Gianaurelio,equals">Cuniberti, Gianaurelio</a><br><br><h5>KAUST Department</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=KAUST Solar Center (KSC),equals">KAUST Solar Center (KSC)</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.department=Physical Science and Engineering (PSE) Division,equals">Physical Science and Engineering (PSE) Division</a><br><br><h5>Online Publication Date</h5>2014-10-14<br><br><h5>Print Publication Date</h5>2015-04<br><br><h5>Date</h5>2014-10-14</span>
display.details.right<span><h5>Abstract</h5>In this contribution, molecular materials are highlighted as an important topic in the diverse field of condensed matter physics, with focus on their particular electronic and transport properties. A better understanding of their performance in various applications and devices demands for an extension of basic theoretical approaches to describe charge transport in molecular materials, including the accurate description of electron-phonon coupling. Starting with the simplest case of a molecular junction and moving on to larger aggregates of bulk organic semiconductors, charge-transport regimes from ballistic motion to incoherent hopping, which are frequently encountered in molecular systems under respective conditions, are discussed. Transport features of specific materials are described through ab initio material parameters whose determination is addressed. © 2014 Wiley-VCH Verlag GmbH & Co. KGaA.<br><br><h5>Citation</h5>Ortmann F, Radke KS, Günther A, Kasemann D, Leo K, et al. (2014) Materials Meets Concepts in Molecule-Based Electronics. Advanced Functional Materials 25: 1933–1954. Available: http://dx.doi.org/10.1002/adfm.201402334.<br><br><h5>Acknowledgements</h5>This work is partly based on original research of H. Kleemann, D. Nozaki, and K. Hannewald. The authors gratefully acknowledge fruitful discussions with all of them. F.O. would like to thank the DFG for financial support within the Emmy-Noether funding scheme and A.G. thanks the Dr. Isolde-Dietrich-Stiftung for its financial support. This work was partly supported by the DFG within the Cluster of Excellence "Center for Advancing Electronics Dresden". The authors acknowledge the Center for Information Services and High Performance Computing (ZIH) at TU Dresden for computational resources.<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=Wiley,equals">Wiley</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=Advanced Functional Materials,equals">Advanced Functional Materials</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1002/adfm.201402334">10.1002/adfm.201402334</a></span>
kaust.personLeo, Karl
orcid.authorOrtmann, Frank
orcid.authorRadke, K. Sebastian
orcid.authorGünther, Alrun
orcid.authorKasemann, Daniel
orcid.authorLeo, Karl
orcid.authorCuniberti, Gianaurelio
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