Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Abstract
High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

Citation
Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films 2012, 100 (25):253507 Applied Physics Letters

Publisher
AIP Publishing

Journal
Applied Physics Letters

DOI
10.1063/1.4729787

Additional Links
http://scitation.aip.org/content/aip/journal/apl/100/25/10.1063/1.4729787

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