Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

Abstract
Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.

Citation
Ghoneim MT, Alfaraj N, Sevilla GAT, Hussain MM (2015) Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET. 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO). Available: http://dx.doi.org/10.1109/NANO.2015.7388905.

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

Conference/Event Name
15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

DOI
10.1109/NANO.2015.7388905

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