Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

Abstract
Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.

Citation
Kaloni TP, Schwingenschlögl U (2013) Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation. Journal of Applied Physics 114: 184307. doi:10.1063/1.4830016.

Publisher
AIP Publishing

Journal
Journal of Applied Physics

DOI
10.1063/1.4830016

arXiv
1310.7688

Additional Links
http://scitation.aip.org/content/aip/journal/jap/114/18/10.1063/1.4830016http://arxiv.org/abs/1310.7688

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