Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets

dc.contributor.authorBecerra, Daniel L.
dc.contributor.authorKuritzky, Leah Y.
dc.contributor.authorNedy, Joseph
dc.contributor.authorAbbas, Arwa Saud
dc.contributor.authorPourhashemi, Arash
dc.contributor.authorFarrell, Robert M.
dc.contributor.authorCohen, Daniel A.
dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorSpeck, James S.
dc.contributor.authorNakamura, Shuji
dc.contributor.institutionUniv Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
dc.contributor.institutionUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
dc.date.accessioned2022-05-30T11:32:44Z
dc.date.available2022-05-30T11:32:44Z
dc.date.issued2016-03-02
dc.description.abstractContinuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.
dc.description.sponsorshipThis work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR05-20415.
dc.identifier.citationBecerra, D. L., Kuritzky, L. Y., Nedy, J., Saud Abbas, A., Pourhashemi, A., Farrell, R. M., … Nakamura, S. (2016). Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets. Applied Physics Letters, 108(9), 091106. doi:10.1063/1.4943143
dc.identifier.doi10.1063/1.4943143
dc.identifier.eid2-s2.0-84960439844
dc.identifier.issn1077-3118
dc.identifier.issn0003-6951
dc.identifier.issue9
dc.identifier.journalAPPLIED PHYSICS LETTERS
dc.identifier.pages091106
dc.identifier.urihttp://hdl.handle.net/10754/678328
dc.identifier.volume108
dc.identifier.wosutWOS:000375329200006
dc.publisherAMER INST PHYSICS
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4943143
dc.titleMeasurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets
dc.typeArticle
display.details.left<span><h5>Type</h5>Article<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?query=orcid.id:0000-0001-6338-4185&spc.sf=dc.date.issued&spc.sd=DESC">Becerra, Daniel L.</a> <a href="https://orcid.org/0000-0001-6338-4185" target="_blank"><img src="https://repository.kaust.edu.sa/server/api/core/bitstreams/82a625b4-ed4b-40c8-865a-d6a5225a26a4/content" width="16" height="16"/></a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Kuritzky, Leah Y.,equals">Kuritzky, Leah Y.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Nedy, Joseph,equals">Nedy, Joseph</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Abbas, Arwa Saud,equals">Abbas, Arwa Saud</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Pourhashemi, Arash,equals">Pourhashemi, Arash</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Farrell, Robert M.,equals">Farrell, Robert M.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Cohen, Daniel A.,equals">Cohen, Daniel A.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=DenBaars, Steven P.,equals">DenBaars, Steven P.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Speck, James S.,equals">Speck, James S.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Nakamura, Shuji,equals">Nakamura, Shuji</a><br><br><h5>Date</h5>2016-03-02</span>
display.details.right<span><h5>Abstract</h5>Continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.<br><br><h5>Citation</h5>Becerra, D. L., Kuritzky, L. Y., Nedy, J., Saud Abbas, A., Pourhashemi, A., Farrell, R. M., … Nakamura, S. (2016). Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets. Applied Physics Letters, 108(9), 091106. doi:10.1063/1.4943143<br><br><h5>Acknowledgements</h5>This work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR05-20415.<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=AMER INST PHYSICS,equals">AMER INST PHYSICS</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=APPLIED PHYSICS LETTERS,equals">APPLIED PHYSICS LETTERS</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1063/1.4943143">10.1063/1.4943143</a><br><br><h5>Additional Links</h5>http://aip.scitation.org/doi/10.1063/1.4943143</span>
orcid.authorBecerra, Daniel L.::0000-0001-6338-4185
orcid.authorKuritzky, Leah Y.
orcid.authorNedy, Joseph
orcid.authorAbbas, Arwa Saud
orcid.authorPourhashemi, Arash
orcid.authorFarrell, Robert M.
orcid.authorCohen, Daniel A.
orcid.authorDenBaars, Steven P.
orcid.authorSpeck, James S.
orcid.authorNakamura, Shuji
orcid.id0000-0001-6338-4185
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