Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

Abstract
The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ~830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

Citation
Ng, T. K., Zhao, C., Shen, C., Jahangir, S., Janjua, B., Ben Slimane, A., … Ooi, B. S. (2014). Red to Near-Infrared Emission from InGaN/GaN Quantum-Disks-in-Nanowires LED. CLEO: 2014. doi:10.1364/cleo_si.2014.sm2j.2

Publisher
The Optical Society

Journal
CLEO: 2014

Conference/Event Name
CLEO: Science and Innovations, CLEO_SI 2014

DOI
10.1364/cleo_si.2014.sm2j.2

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