High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

Abstract
InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

Citation
Zhang M, Banerjee A, Bhattacharya P (2011) High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm). Journal of Crystal Growth 323: 470–472. Available: http://dx.doi.org/10.1016/j.jcrysgro.2010.12.038.

Acknowledgements
The work was supported by a grant from KAUST.

Publisher
Elsevier BV

Journal
Journal of Crystal Growth

DOI
10.1016/j.jcrysgro.2010.12.038

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