Large-area WSe2 electric double layer transistors on a plastic substrate

Type
Article

Authors
Funahashi, Kazuma
Pu, Jiang
Li, Ming-yang
Li, Lain-Jong
Iwasa, Yoshihiro
Takenobu, Taishi

KAUST Department
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division

Online Publication Date
2015-04-27

Print Publication Date
2015-06-01

Date
2015-04-27

Abstract
Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.

Citation
Funahashi, K., Pu, J., Li, M.-Y., Li, L.-J., Iwasa, Y., & Takenobu, T. (2015). Large-area WSe2 electric double layer transistors on a plastic substrate. Japanese Journal of Applied Physics, 54(6S1), 06FF06. doi:10.7567/jjap.54.06ff06

Publisher
IOP Publishing

Journal
Japanese Journal of Applied Physics

DOI
10.7567/JJAP.54.06FF06

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