Broad-Band Polarization-Insensitive Metasurface Holography with a Single-Phase Map

Abstract
The remarkable potential of metasurface holography promises revolutionary advancements for imaging, chip-integrated augmented/virtual reality (AR/VR) technology, and flat optical displays. The choice of constituent element geometry constrains many potential applications purveyed through polarization-independent optical response. The limited capabilities and degree of freedoms in commonly used meta-atoms restrict the design flexibility to break the conventional trade-off between polarization-insensitivity and bandwidth. Here, we propose a geometric phase-enabled novel design strategy to break this conventional trade-off. The proposed strategy ensures the realization of broad-band polarization-insensitivity through a simplified design procedure. An identical output wavefront manipulation is achieved by adjusting the phase delay freedom of geometric phase engineering under different incident polarization conditions. For proof of concept, a metahologram device is fabricated by an optimized complementary metal–oxide–semiconductor (CMOS)-compatible material of hydrogenated amorphous silicon (a-Si:H). This metahologram device reproduces the required hologram with high image fidelity and efficiency under different polarization scenarios of white light incidence. Due to the simple design strategy, low computational cost, and easy fabrication, the proposed technique can be an excellent candidate for realizing polarization-insensitive metahologram devices.

Citation
Javed, I., Kim, J., Naveed, M. A., Oh, D. K., Jeon, D., Kim, I., Zubair, M., Massoud, Y., Mehmood, M. Q., & Rho, J. (2022). Broad-Band Polarization-Insensitive Metasurface Holography with a Single-Phase Map. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.2c07960

Acknowledgements
This work was financially supported by the POSCO-POSTECH-RIST Convergence Research Center program funded by POSCO, the LGD-SNU incubation program funded by LG Display, and the National Research Foundation (NRF) grants (NRF-2022M3C1A3081312, NRF-2022M3H4A1A02074314, NRF-2021K1A3A1A17086079, CAMM-2019M3A6B3030637, NRF-2019R1A5A8080290) funded by the Ministry of Science and ICT (MSIT) of the Korean government. I.K. acknowledges the NRF Sejong Science fellowship (NRF-2021R1C1C2004291) funded by the MSIT of the Korean government. J.K. acknowledges the POSTECH Alchemist fellowship. D.K.O. acknowledges the Hyundai Motor Chung Mong-Koo fellowship. Y.M. acknowledges a research funding for the Innovative Technologies Laboratories from King Abdullah University of Science and Technology (KAUST).

Publisher
American Chemical Society (ACS)

Journal
ACS Applied Materials & Interfaces

DOI
10.1021/acsami.2c07960

Additional Links
https://pubs.acs.org/doi/10.1021/acsami.2c07960

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