Full-scale exfoliation of InGaN-based light-eMitting diodes via Microcavity-assisted crack propagation by using tensile-stressed Ni layers

Abstract
We demonstrated microcavity-assisted crack propagation for the full-scale exfoliation of a InGaN-based light-emitting diode (LED) membrane by using nanoporous structures and tensile-stressed Ni layers. The blue LED membrane was transferred on a glass slide by using an adhesive bonding and showed good performance.

Citation
Min, J.-H., Jeong, T.-H., Lee, K. J., Min, J.-W., Park, T.-Y., Ng, T. K., & Ooi, B. S. (2022). Full-scale exfoliation of InGaN-based light-eMitting diodes via Microcavity-assisted crack propagation by using tensile-stressed Ni layers. 2022 28th International Semiconductor Laser Conference (ISLC). https://doi.org/10.23919/islc52947.2022.9943440

Publisher
IEEE

Conference/Event Name
2022 28th International Semiconductor Laser Conference (ISLC)

DOI
10.23919/islc52947.2022.9943440

Additional Links
https://ieeexplore.ieee.org/document/9943440/

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