Band Alignment at GaN/Single-Layer WSe2 Interface

Abstract
We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

Citation
Tangi M, Mishra P, Tseng C-C, Ng TK, Hedhili MN, et al. (2017) Band Alignment at GaN/Single-Layer WSe2 Interface. ACS Applied Materials & Interfaces 9: 9110–9117. Available: http://dx.doi.org/10.1021/acsami.6b15370.

Acknowledgements
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).

Publisher
American Chemical Society (ACS)

Journal
ACS Applied Materials & Interfaces

DOI
10.1021/acsami.6b15370

Additional Links
http://pubs.acs.org/doi/full/10.1021/acsami.6b15370

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