Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism

Abstract
© 2015 SPST. In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.

Citation
Jiang J, Zhang B, Yu M, Li L, Neisser M, et al. (2015) Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism. Journal of Photopolymer Science and Technology 28: 515–518. Available: http://dx.doi.org/10.2494/photopolymer.28.515.

Acknowledgements
The authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the KAUST-Cornell Center of Energy and Sustainability (KAUST_CU) and Lawrence Berkeley National Lab (LBNL) for use of their facilities.

Publisher
Technical Association of Photopolymers, Japan

Journal
Journal of Photopolymer Science and Technology

DOI
10.2494/photopolymer.28.515

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