Quantum oscillations on the surface of InAs epilayer

Abstract
Indium arsenide (InAs), a narrow-gap semiconductor, has a highly conductive 2-dimensional surface state naturally formed as a result of band bending at the free surface. The Shubnikov–de Haas oscillations have been studied widely in its heterostructures, e.g. 2-dimensional electron gases. However, studies on such a nature surface state are missing. Here, we report a Shubnikov-de Haas (SdH) oscillation that originates from the InAs surface state. Two leading oscillation frequencies in the SdH signal are attributed to Rashba spin-orbit coupling residing in the surface state. We also found for the surface state an effective electron mass of 0.038 m0, heavier than ~0.023 m0 in the bulk. Our study also suggests a Rashba coupling constant in the order of ~10−11 eV m, showing good agreement with previously reported values for InAs.

Citation
Yuan, Y., Wang, X., Kosel, J., & Sun, J. (2019). Quantum oscillations on the surface of InAs epilayer. Physica E: Low-Dimensional Systems and Nanostructures, 114, 113604. doi:10.1016/j.physe.2019.113604

Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant No. 11804397).

Publisher
Elsevier BV

Journal
Physica E: Low-Dimensional Systems and Nanostructures

DOI
10.1016/j.physe.2019.113604

Additional Links
https://linkinghub.elsevier.com/retrieve/pii/S1386947719306290

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