Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

Abstract
We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

Citation
Ghoneim, M. T., Rojas, J. P., Young, C. D., Bersuker, G., & Hussain, M. M. (2015). Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon. IEEE Transactions on Reliability, 64(2), 579–585. doi:10.1109/tr.2014.2371054

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
IEEE Transactions on Reliability

DOI
10.1109/TR.2014.2371054

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