CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

Abstract
Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

Citation
Ghoneim, M. T., Hanna, A. N., & Hussain, M. M. (2014). CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric. 14th IEEE International Conference on Nanotechnology. doi:10.1109/nano.2014.6967961

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
14th IEEE International Conference on Nanotechnology

Conference/Event Name
2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014

DOI
10.1109/NANO.2014.6967961

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