Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

Abstract
Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Citation
Manchon, A. (2011). Voltage-Driven Versus Current-Driven Spin Torque in Anisotropic Tunneling Junctions. IEEE Transactions on Magnetics, 47(10), 2735–2738. doi:10.1109/tmag.2011.2157108

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
IEEE Transactions on Magnetics

DOI
10.1109/TMAG.2011.2157108

arXiv
1110.3491

Additional Links
https://ieeexplore.ieee.org/document/6028069/http://arxiv.org/pdf/1110.3491

Permanent link to this record