Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection

Abstract
Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals. It is found that light illumination can significantly increase the dielectric constant of perovskite junctions by 2300%. Furthermore, such Pt/perovskite junctions are used to fabricate self-biased photodetectors. A photodetectivity of 1.4 × 1010 Jones is obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V, and the photodetectivity remains almost constant in a wide range of light intensity. These devices also exhibit fast responses with a rising time of 70 μs and a falling time of 150 μs. As a result of the high crystal quality and low defect density, such single-crystal photodetectors show stable performance after storage in air for over 45 days. Our results suggest that hybrid perovskite single crystals provide a new platform to develop promising optoelectronic applications. © 2016 The Royal Society of Chemistry.

Citation
Shaikh PA, Shi D, Retamal JRD, Sheikh AD, Haque MA, et al. (2016) Schottky junctions on perovskite single crystals: light-modulated dielectric constant and self-biased photodetection. J Mater Chem C 4: 8304–8312. Available: http://dx.doi.org/10.1039/c6tc02828d.

Acknowledgements
The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).

Publisher
Royal Society of Chemistry (RSC)

Journal
Journal of Materials Chemistry C

DOI
10.1039/c6tc02828d

Additional Links
http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C6TC02828D

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