Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes

Abstract
We demonstrate through simulation that complete screening of polarization-induced electric fields in c-plane InGaN/GaN quantum wells (QWs) is possible by equal n- and p-doping of 10 nm layers immediately adjacent to the QW at a level of 7 × 1019 cm-3. Single QW light-emitting diodes with varying QW thickness are grown using the simulated structure. Biased photoluminescence (PL) measurements show no wavelength shift, indicating complete screening of the polarization field. The behavior of PL peak intensity as a function of bias can be explained as a competition between radiative recombination and carrier escape through tunneling or thermionic emission.

Citation
Young, N. G., Farrell, R. M., Oh, S., Cantore, M., Wu, F., Nakamura, S., … Speck, J. S. (2016). Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes. Applied Physics Letters, 108(6), 061105. doi:10.1063/1.4941815

Acknowledgements
This work was supported by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053). The patterned sapphire substrates and the trimethylindium metalorganic sources used for this study were provided by Precision Micro Optics and Sonata LLC, respectively.

Publisher
AMER INST PHYSICS

Journal
APPLIED PHYSICS LETTERS

DOI
10.1063/1.4941815

Additional Links
http://aip.scitation.org/doi/10.1063/1.4941815

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