Scalability of h-BN Based Memristors: Yield and Variability Considerations

Abstract
This paper investigates the impact of scalability on h-BN based memristors, with a focus on yield and variability. Motivated by the atomic-defect-enabled operation mechanism of h-BN memristors, a stochastic geometry modelling framework is employed to characterize the distribution of atomic defects across a large array of devices. This is coupled with a probabilistic defect activation model to characterize the SET voltage. The model is benchmarked to experimental results for monolayer and multi-layer h-BN devices. The presented results highlight the profound impact of scalability on device yield, device-to-device variability and SET voltage.

Citation
Abdelrahman, A. S., ElSawy, H., Lanza, M., Akinwande, D., & Al-Dirini, F. (2023). Scalability of h-BN Based Memristors: Yield and Variability Considerations. 2023 Silicon Nanoelectronics Workshop (SNW). https://doi.org/10.23919/snw57900.2023.10183973

Publisher
IEEE

Conference/Event Name
2023 Silicon Nanoelectronics Workshop (SNW)

DOI
10.23919/snw57900.2023.10183973

Additional Links
https://ieeexplore.ieee.org/document/10183973/

Permanent link to this record