Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning

dc.contributor.authorChakrabarty, Souvik
dc.contributor.authorOuyang, Christine
dc.contributor.authorKrysak, Marie
dc.contributor.authorTrikeriotis, Markos
dc.contributor.authorCho, Kyoungyoung
dc.contributor.authorGiannelis, Emmanuel P.
dc.contributor.authorOber, Christopher K.
dc.contributor.institutionCornell University, Ithaca, United States
dc.contributor.institutionSEMATECH Austin, Austin, United States
dc.date.accessioned2016-02-25T13:53:20Z
dc.date.available2016-02-25T13:53:20Z
dc.date.issued2013-04-01
dc.description.abstractDUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.
dc.description.sponsorshipThe authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and TechnologyFacility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and theKAUST-Cornell Center of Energy and Sustainability (KAUST_CU) for use of their facilities.
dc.identifier.citationChakrabarty S, Ouyang C, Krysak M, Trikeriotis M, Cho K, et al. (2013) Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning. Extreme Ultraviolet (EUV) Lithography IV. Available: http://dx.doi.org/10.1117/12.2011490.
dc.identifier.doi10.1117/12.2011490
dc.identifier.journalExtreme Ultraviolet (EUV) Lithography IV
dc.identifier.urihttp://hdl.handle.net/10754/599125
dc.publisherSPIE-Intl Soc Optical Eng
dc.subjectDual tone
dc.subjectEUV
dc.subjectLithography
dc.subjectMetal oxide
dc.subjectNanoparticle photoresist
dc.subjectPatterning mechanism
dc.titleOxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning
dc.typeConference Paper
display.details.left<span><h5>Type</h5>Conference Paper<br><br><h5>Authors</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Chakrabarty, Souvik,equals">Chakrabarty, Souvik</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Ouyang, Christine,equals">Ouyang, Christine</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Krysak, Marie,equals">Krysak, Marie</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Trikeriotis, Markos,equals">Trikeriotis, Markos</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Cho, Kyoungyoung,equals">Cho, Kyoungyoung</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Giannelis, Emmanuel P.,equals">Giannelis, Emmanuel P.</a><br><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.author=Ober, Christopher K.,equals">Ober, Christopher K.</a><br><br><h5>Date</h5>2013-04-01</span>
display.details.right<span><h5>Abstract</h5>DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions. © 2013 SPIE.<br><br><h5>Citation</h5>Chakrabarty S, Ouyang C, Krysak M, Trikeriotis M, Cho K, et al. (2013) Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning. Extreme Ultraviolet (EUV) Lithography IV. Available: http://dx.doi.org/10.1117/12.2011490.<br><br><h5>Acknowledgements</h5>The authors gratefully acknowledge SEMATECH for funding, as well as the Cornell Nanoscale Science and TechnologyFacility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and theKAUST-Cornell Center of Energy and Sustainability (KAUST_CU) for use of their facilities.<br><br><h5>Publisher</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.publisher=SPIE-Intl Soc Optical Eng,equals">SPIE-Intl Soc Optical Eng</a><br><br><h5>Journal</h5><a href="https://repository.kaust.edu.sa/search?spc.sf=dc.date.issued&spc.sd=DESC&f.journal=Extreme Ultraviolet (EUV) Lithography IV,equals">Extreme Ultraviolet (EUV) Lithography IV</a><br><br><h5>DOI</h5><a href="https://doi.org/10.1117/12.2011490">10.1117/12.2011490</a></span>
kaust.acknowledged.supportUnitKAUST-Cornell Center of Energy and Sustainability
orcid.authorChakrabarty, Souvik
orcid.authorOuyang, Christine
orcid.authorKrysak, Marie
orcid.authorTrikeriotis, Markos
orcid.authorCho, Kyoungyoung
orcid.authorGiannelis, Emmanuel P.
orcid.authorOber, Christopher K.
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