A Time-domain Carrier Generation Rate Model for Optoelectronic Device Simulations

Abstract
The nonlinear interactions between electromagnetic fields and carriers in optoelectronic devices call for a multiphysics simulation approach to be carried out in the time domain. The widely used Poynting vector-based carrier generation rate model leads to an unphysical divergent solution when strong low-frequency fields are generated by moving carriers. This work proposes a material absorption-based carrier generation rate model for time-domain simulation of optoelectronic devices. The optoelectronic material is described by a Lorentz dispersion model with poles in the optical frequency range and negligible absorption at lower frequencies. The instantaneous optical absorption, which is computed from the polarization current density, is used to obtain the generation rate. Numerical examples show that the proposed method is more accurate than the Poynting vector-based model and is stable even when the generated lower-frequency fields are strong.

Citation
Chen, L., & Bagci, H. (2021). A Time-domain Carrier Generation Rate Model for Optoelectronic Device Simulations. 2021 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (APS/URSI). https://doi.org/10.1109/aps/ursi47566.2021.9704753

Acknowledgements
This study is supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. 2019-CRG8-4056. The authors also thank the KAUST Supercomputing Laboratory (KSL) for providing the required computational resources.

Publisher
IEEE

Conference/Event Name
2021 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (APS/URSI)

DOI
10.1109/aps/ursi47566.2021.9704753

Additional Links
https://ieeexplore.ieee.org/document/9704753/

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