Demonstration of Ga2O3 trigate transistors on (100) silicon substrates

Abstract
In this paper we demonstrated the UWBG Ga 2 O 3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (10 5 ) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm 2 /V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.

Citation
Yuvaraja, S., Khandelwal, V., Krishna, S., Lu, Y., Liu, Z., Kumar, M., Chettri, D., Tang, X., Garcia, G. I. M., Liao, C.-H., & Li, X. (2022). Demonstration of Ga2O3 trigate transistors on (100) silicon substrates. 2022 IEEE International Conference on Emerging Electronics (ICEE). https://doi.org/10.1109/icee56203.2022.10117786

Acknowledgements
Near-term Grand Challenge: REI/1/4999-01-01 Impact Acceleration Fund: REI/1/5124-01-01 Baseline: BAS/1/1664-01-01

Publisher
IEEE

Conference/Event Name
2022 IEEE International Conference on Emerging Electronics (ICEE)

DOI
10.1109/icee56203.2022.10117786

Additional Links
https://ieeexplore.ieee.org/document/10117786/

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