Electrical Manipulation of Exchange Bias in an Antiferromagnet/Ferromagnet-Based Device via Spin–Orbit Torque

Abstract
Electrical manipulation of exchange bias (EB) enables an additional degree of freedom in the design of innovative spintronic devices. However, the electrical switching of EB via spin–orbit torque (SOT) has not been achieved in magnetic tunnel junctions (MTJs), which are one of the building blocks in spintronic devices. Herein, based on the SOT in antiferromagnets (AFMs), perpendicular EB reversal across AFM IrMn and ferromagnetic (FM) multilayer [Co/Pt] multilayer is demonstrated both in extended and confined geometries. In particular, in three-terminal perpendicular MTJ devices, the switching of the EB using the SOT is achieved. Both high and low resistances are observed at the zero magnetic field during EB switching. The findings provide the direction to include a new functionality in spintronic devices and will inspire future research in exploring the electrical control of EB in SOT magnetic random access memory (SOT-MRAM).

Citation
Fang, B., Sánchez-Tejerina San José, L., Chen, A., Li, Y., Zheng, D., Ma, Y., Algaidi, H., Liu, K., Finocchio, G., & Zhang, X. (2022). Electrical Manipulation of Exchange Bias in an Antiferromagnet/Ferromagnet-Based Device via Spin–Orbit Torque. Advanced Functional Materials, 2112406. Portico. https://doi.org/10.1002/adfm.202112406

Acknowledgements
The work reported here was funded by the King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under Award Nos. OSR-2018-3717-CRG7 and OSR-2019-CRG8-4081. This work is also partially supported by the National Science Foundation of China (11804370). K.L. acknowledges support by SMART, one of seven centers of nCORE, a Semiconductor Research Corporation program, sponsored by the US National Institute of Standards and Technology (NIST).

Publisher
Wiley

Journal
Advanced Functional Materials

DOI
10.1002/adfm.202112406

Additional Links
https://onlinelibrary.wiley.com/doi/10.1002/adfm.202112406

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