Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity
Adv Elect Materials - 2023 - Chiu - Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity.pdf
Wilson, William L.
KAUST DepartmentPhysical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955-6900 Saudi Arabia
Physical Science and Engineering (PSE) Division
Material Science and Engineering Program
KAUST Solar Center (KSC)
Permanent link to this recordhttp://hdl.handle.net/10754/688040
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AbstractTin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record-high thermoelectric figure of merit (ZT), purely in-plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large-area, ultrathin, and high-quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD-synthesized flakes are often thick (>10 nm) with small lateral sizes (<10 µm). In this work, high-quality 2D SnSe crystals are synthesized via low-pressure PVD, which display in-plane ferroelectric domains observed by piezoresponse force microscopy and polarization-dependent reflection spectroscopy. Detailed studies regarding the roles of various parameters are further carried out, including substrate pre-annealing, growth duration, temperature, and pressure, which enable to rationally optimize the growth and obtain 2D SnSe crystals with lateral sizes up to ≈23.0 µm and thicknesses down to ≈2.0 nm (3–4 layers). This work paves the way for the controlled growth of large-area 2D SnSe, facilitating the future exploration of many interesting multiferroic properties and applications with atomic thickness.
CitationChiu, M., Ji, X., Zhang, T., Mao, N., Luo, Y., Shi, C., Zheng, X., Liu, H., Han, Y., Wilson, W. L., Luo, Z., Tung, V., & Kong, J. (2023). Growth of Large-Sized 2D Ultrathin SnSe Crystals with In-Plane Ferroelectricity. Advanced Electronic Materials, 2201031. Portico. https://doi.org/10.1002/aelm.202201031
SponsorsM.-H.C., X.J., and T.Z. contributed equally to this work. X.J. and J.K. acknowledge the support from the U.S. Army Research Office (ARO) MURI project under grant number W911NF-18-1-0431 and the US Army Research Office through the Institute for Soldier Nanotechnologies at MIT, under cooperative agreement no. W911NF-18-2-0048. T.Z., X.Z. and J.K. acknowledge the support by the U.S. Department of Energy (DOE), Office of Science, and Basic Energy Sciences (BES) under award DE-SC0020042. N.M. and J.K. acknowledge the support by the STC Center for Integrated Quantum Materials, NSF grant number DMR-1231319. C.S. and Y.H. acknowledge the support from Welch Foundation (C-2065-20210327). The authors acknowledge the use of the Electron Microscopy Center at Rice.
JournalAdvanced Electronic Materials
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