Use and Application of 2D Layered Materials-Based Memristors for Neuromorphic Computing
MS Thesis - Osamah Alharbi - Final.pdf
Embargo End Date:
Committee membersInal, Sahika
Salama, Khaled N.
ProgramMaterial Science and Engineering
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Embargo End Date2024-02-08
Permanent link to this recordhttp://hdl.handle.net/10754/687565
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Access RestrictionsAt the time of archiving, the student author of this thesis opted to temporarily restrict access to it. The full text of this thesis will become available to the public after the expiration of the embargo on 2024-02-08.
AbstractThis work presents a step forward in the use of 2D layered materials (2DLM), specifically hexagonal boron nitride (h-BN), for the fabrication of memristors. In this study, we fabricate, characterize, and use h-BN based memristors with Ag/few-layer h-BN/Ag structure to implement a fully functioning artificial leaky integrate-and-fire neuron on hardware. The devices showed volatile resistive switching behavior with no electro-forming process required, with relatively low VSET and long endurance of beyond 1.5 million cycles. In addition, we present some of the failure mechanisms in these devices with some statistical analyses to understand the causes, as well as a statistical study of both cycle-to-cycle and device-to-device variabilities in 20 devices. Moreover, we study the use of these devices in implementing a functioning artificial leaky integrate-and-fire neuron similar to a biological neuron in the brain. We provide SPICE simulation as well as hardware implementation of the artificial neuron that are in full agreement, showing that our device could be used for such application. Additionally, we study the use of these devices as an activation function for spiking neural networks (SNNs) by providing a SPICE simulation of a fully trained network, where the artificial spiking neuron is connected to the output terminal of a crossbar array. The SPICE simulations provide a proof of concept for using h-BN based memristor for activation function for SNNs.
CitationAlharbi, O. (2023). Use and Application of 2D Layered Materials-Based Memristors for Neuromorphic Computing [KAUST Research Repository]. https://doi.org/10.25781/KAUST-T6802