Nanoscale observation of electro-synaptic response

Abstract

Resistive switching technologies like information storage and neuromorphic computation require a high integration density. Hence, studying ultra-small devices with few nanometres in length is important to extract accurate conclusions. However, sometimes patterning small devices is challenging and one good option is to study the electrical properties of the materials at the nanoscale using conductive atomic force microscopy (CAFM). In this seminar, I will explain multiple types of experiments that are useful to characterize the electronic properties of different materials and devices at the nanoscale using CAFM, explaining the different setups that we have developed. I will describe some of the properties I have analysed in metal-oxides, graphene, molybdenum disulphide, hexagonal boron nitride, and nanoparticles.