Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors featured
AuthorsAlghamdi, Wejdan S.
Salama, Khaled N.
Anthopoulos, Thomas D.
KAUST DepartmentAdvanced Membranes and Porous Materials Research Center
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
KAUST Solar Center (KSC)
King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Science and Engineering Division (PES), Thuwal 23955-6900, Saudi Arabia
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant NumberOSR-2018-CARF/CCF3079
Permanent link to this recordhttp://hdl.handle.net/10754/686232
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AbstractCombining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (μFE) of >50 cm2 V−1 s−1, accompanied by a low threshold voltage and a high on/off ratio (∼108), is achieved using an optimal channel configuration. The high μFE in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments.
CitationAlGhamdi, W. S., Fakieh, A., Faber, H., Lin, Y.-H., Lin, W.-Z., Lu, P.-Y., Liu, C.-H., Salama, K. N., & Anthopoulos, T. D. (2022). Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors. Applied Physics Letters, 121(23), 233503. https://doi.org/10.1063/5.0126935
SponsorsThis publication is based upon the work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2018-CARF/CCF3079. We are grateful for assistance from the KAUST Solar Center and KAUST Core labs. Additionally, we would like to thank Dr. Cheng Sheng Lin of Pitotech Co., Ltd. (Taiwan) for useful suggestions and assistance in device modeling and simulation.
JournalApplied Physics Letters
CollectionsArticles; Advanced Membranes and Porous Materials Research Center; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Sensors Lab; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
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