Improving OFF-State Bias-Stress Stability in High-Mobility Conjugated Polymer Transistors with an Anti-Solvent Treatment.
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ArticleAuthors
Nguyen, MalgorzataKraft, Ulrike
Tan, Wen Liang
Dobryden, Illia
Broch, Katharina
Zhang, Weimin
Un, Hio-Ieng
Simatos, Dimitrios
Venkateshavaran, Deepak
McCulloch, Iain

Claesson, Per M
McNeill, Christopher R
Sirringhaus, Henning

KAUST Department
KAUST Solar Center (KSC)Physical Science and Engineering (PSE) Division
Chemical Science Program
Date
2022-11-14Embargo End Date
2023-11-14Permanent link to this record
http://hdl.handle.net/10754/685758
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Conjugated polymer field-effect transistors are emerging as an enabling technology for flexible electronics due to their excellent mechanical properties combined with sufficiently high charge carrier mobilities and compatibility with large-area, low-temperature processing. However, their electrical stability remains a concern. ON-state (accumulation mode) bias-stress instabilities in organic semiconductors have been widely studied, and multiple mitigation strategies have been suggested. In contrast, OFF-state (depletion mode) bias-stress instabilities remain poorly understood despite being crucial for many applications in which the transistors are held in their OFF-state for most of the time. Here, we present a simple method of using an anti-solvent treatment to achieve significant improvements in OFF-state bias-stress and environmental stability as well as general device performance for one of the best performing polymers, solution-processable indacenodithiophene-co-benzothiadiazole (IDT-BT). IDT-BT is weakly crystalline, and we attribute the notable improvements to an anti-solvent-induced, increased degree of crystallinity, resulting in a lower probability of electron trapping and the removal of charge traps. Our work highlights the importance of the microstructure in weakly crystalline polymer films and offers a simple processing strategy for achieving the reliability required for applications in flexible electronics.Citation
Nguyen, M., Kraft, U., Tan, W. L., Dobryden, I., Broch, K., Zhang, W., Un, H., Simatos, D., Venkateshavaran, D., McCulloch, I., Claesson, P. M., McNeill, C. R., & Sirringhaus, H. (2022). Improving OFF-State Bias-Stress Stability in High-Mobility Conjugated Polymer Transistors with an Anti-Solvent Treatment. Advanced Materials, 2205377. Portico. https://doi.org/10.1002/adma.202205377Sponsors
We acknowledge funding from the Engineering and Physical Sciences Research Council (EPSRC, EP/R031894/1). D. Simatos acknowledges support from the EPSRC Centre for Doctoral Training (CDT) in Sensor Technologies and Application (EP/L015889/1). H. Un acknowledges funding from EPSRC (EP/S030662/1). M. Nguyen acknowledges PhD studentship support from FlexEnable Ltd.PubMed ID
36373490Additional Links
https://onlinelibrary.wiley.com/doi/10.1002/adma.202205377ae974a485f413a2113503eed53cd6c53
10.1002/adma.202205377
Scopus Count
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