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    Improving OFF-State Bias-Stress Stability in High-Mobility Conjugated Polymer Transistors with an Anti-Solvent Treatment.

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    Advanced Materials - 2022 - Nguyen - Improving OFF‐State Bias‐Stress Stability in High‐Mobility Conjugated Polymer.pdf
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    Embargo End Date:
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    Type
    Article
    Authors
    Nguyen, Malgorzata
    Kraft, Ulrike
    Tan, Wen Liang
    Dobryden, Illia
    Broch, Katharina
    Zhang, Weimin
    Un, Hio-Ieng
    Simatos, Dimitrios
    Venkateshavaran, Deepak
    McCulloch, Iain cc
    Claesson, Per M
    McNeill, Christopher R
    Sirringhaus, Henning cc
    KAUST Department
    KAUST Solar Center (KSC)
    Physical Science and Engineering (PSE) Division
    Chemical Science Program
    Date
    2022-11-14
    Embargo End Date
    2023-11-14
    Permanent link to this record
    http://hdl.handle.net/10754/685758
    
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    Abstract
    Conjugated polymer field-effect transistors are emerging as an enabling technology for flexible electronics due to their excellent mechanical properties combined with sufficiently high charge carrier mobilities and compatibility with large-area, low-temperature processing. However, their electrical stability remains a concern. ON-state (accumulation mode) bias-stress instabilities in organic semiconductors have been widely studied, and multiple mitigation strategies have been suggested. In contrast, OFF-state (depletion mode) bias-stress instabilities remain poorly understood despite being crucial for many applications in which the transistors are held in their OFF-state for most of the time. Here, we present a simple method of using an anti-solvent treatment to achieve significant improvements in OFF-state bias-stress and environmental stability as well as general device performance for one of the best performing polymers, solution-processable indacenodithiophene-co-benzothiadiazole (IDT-BT). IDT-BT is weakly crystalline, and we attribute the notable improvements to an anti-solvent-induced, increased degree of crystallinity, resulting in a lower probability of electron trapping and the removal of charge traps. Our work highlights the importance of the microstructure in weakly crystalline polymer films and offers a simple processing strategy for achieving the reliability required for applications in flexible electronics.
    Citation
    Nguyen, M., Kraft, U., Tan, W. L., Dobryden, I., Broch, K., Zhang, W., Un, H., Simatos, D., Venkateshavaran, D., McCulloch, I., Claesson, P. M., McNeill, C. R., & Sirringhaus, H. (2022). Improving OFF-State Bias-Stress Stability in High-Mobility Conjugated Polymer Transistors with an Anti-Solvent Treatment. Advanced Materials, 2205377. Portico. https://doi.org/10.1002/adma.202205377
    Sponsors
    We acknowledge funding from the Engineering and Physical Sciences Research Council (EPSRC, EP/R031894/1). D. Simatos acknowledges support from the EPSRC Centre for Doctoral Training (CDT) in Sensor Technologies and Application (EP/L015889/1). H. Un acknowledges funding from EPSRC (EP/S030662/1). M. Nguyen acknowledges PhD studentship support from FlexEnable Ltd.
    Journal
    Advanced materials (Deerfield Beach, Fla.)
    DOI
    10.1002/adma.202205377
    PubMed ID
    36373490
    Additional Links
    https://onlinelibrary.wiley.com/doi/10.1002/adma.202205377
    ae974a485f413a2113503eed53cd6c53
    10.1002/adma.202205377
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Chemical Science Program; KAUST Solar Center (KSC)

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