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AKG Manuscript_revised.pdf
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Accepted manuscript
Type
Conference PaperKAUST Department
Innovative Technologies Laboratories (ITL), King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi ArabiaComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
Date
2022-11-08Permanent link to this record
http://hdl.handle.net/10754/685680
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In this paper, a dielectric material assisted excitation mechanism is proposed to confine Tamm Modes at the dielectric-air interface. The performance analysis of proposed structure is performed using transfer matrix method (TMM). The design comprises a bilayer one-dimensional photonic crystal structure having a top defect layer. The defect layer thickness, and incident angles are optimized to confirm the Tamm mode confinement at an operating wavelength of 632.8nm. The proposed structure shows a strong Tamm mode localization for a defect layer thickness of 210nm. Whereas an evanescent Tamm mode is also excited for a lower defect layer thickness of around 170nm.Citation
Goyal, A. K., Pradhan, K. P., & Massoud, Y. (2022). Theoretical Analysis of Dielectric Assisted Tamm Mode Excitation. 2022 IEEE 22nd International Conference on Nanotechnology (NANO). https://doi.org/10.1109/nano54668.2022.9928633Publisher
IEEEConference/Event name
2022 IEEE 22nd International Conference on Nanotechnology (NANO)ISBN
978-1-6654-5226-7Additional Links
https://ieeexplore.ieee.org/document/9928633/https://ieeexplore.ieee.org/document/9928633/
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9928633
ae974a485f413a2113503eed53cd6c53
10.1109/NANO54668.2022.9928633