Massoud, Yehia Mahmoud
KAUST DepartmentComputer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
Innovative Technologies Laboratories (ITL)
Integrated Circuits and Systems Group (ICS), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
Permanent link to this recordhttp://hdl.handle.net/10754/681033
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AbstractToday’s technology demands compact, portable, fast, and energy-efficient devices. One approach to making energy-efficient devices is an in-memory computation that addresses the memory bottleneck issues of the present computing system by utilizing a spintronic device viz. magnetic tunnel junction (MTJ). Further, area and energy can be reduced through approximate computation. We present a circuit design based on the logic-in-memory computing paradigm on voltage-controlled magnetic anisotropy magnetoresistive random access memory (VCMA-MRAM). During the computation, multiple bit cells within the memory array are selected that are in parallel by activating multiple word lines. The designed circuit performs all logic operations-Read/NOT, AND/NAND, OR/NOR, and arithmetic SUM operation (1-bit approximate adder with 75% accuracy for SUM and accurate carry out) by slight modification using control signals. All the simulations have been performed at a 45 nm CMOS technology node with VCMA-MTJ compact model by using the HSPICE simulator. Simulation results show that the proposed circuit’s approximate adder consumes about 300% less energy and 2.3 times faster than its counterpart exact adder.
CitationGulafshan, G., Amara, S., Kumar, R., Khan, D., Fariborzi, H., & Massoud, Y. (2022). Bitwise Logical Operations in VCMA-MRAM. Electronics, 11(18), 2805. https://doi.org/10.3390/electronics11182805
SponsorsThis research received no external funding.
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