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    Large Area Nanostructured Electronics Enabled Via Adhesion Lithography

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    PhD_thesis_KL_V9.pdf
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    11.77Mb
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    PDF
    Description:
    PhD Dissertation
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    Type
    Dissertation
    Authors
    Loganathan, Kalaivanan cc
    Advisors
    Anthopoulos, Thomas D. cc
    Committee members
    Lanza, Mario cc
    Shamim, Atif cc
    Kamal, Asadi
    Program
    Materials Science and Engineering
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2022-09
    Permanent link to this record
    http://hdl.handle.net/10754/681018
    
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    Abstract
    The fifth and sixth generations of mobile communications and the internet of things (IoT) demand high-performance electronic devices made at low cost over a large area. Unlike the conventional Si-based electronics, the emerging large-area electronics (LAE) require flexible, stretchable, and lightweight devices that are printable and able to mass manufacture without compromising the performance of state-of-the-art electronic devices. Hence, there is a quest to find alternative fabrication routes and conventional photolithography. In this research work, we explored the adhesion lithography (a-Lith) to further simplify the process steps by adapting bi-layer metals to induce intrinsic stress in the bi-layer and hence facilitate the self-peeling of metal layers which results in more uniform and smaller nanogap between two metals than the previously established a-Lith fabricated nanogaps. The nanogap metal electrodes are further used to fabricate radio frequency (RF) Schottky diodes made using a printable metal oxide semiconductor and flashlight annealing over wafer-scale and demonstrate the operation frequencies above 100 GHz/47 GHz (intrinsic/extrinsic). Notably, for the first time, photonic annealing on such an ultra-small (< 20 nm) nanoscale channel was demonstrated, and the rapid manufacturing of RF diodes from the solution route was achieved. On the other hand, for the first time, organic diodes made using a-Lith fabricated nanogap metal electrodes, and high mobility polymer semiconductors with molecular dopants showed an extrinsic cut-off frequency well above 14 GHz. Finally, the nanogap metal electrodes were explored as a mold and shadow mask to fabricate nano-feature soft stamp and nano-fluidic channels (NFC), respectively. The soft stamp can replicate the high aspect ratio nanoscale features on any arbitrary substrates using available soft lithography routes, and the NFC is further envisioned for bio-molecules detection and sensing applications.
    Citation
    Loganathan, K. (2022). Large Area Nanostructured Electronics Enabled Via Adhesion Lithography [KAUST Research Repository]. https://doi.org/10.25781/KAUST-2IODE
    DOI
    10.25781/KAUST-2IODE
    ae974a485f413a2113503eed53cd6c53
    10.25781/KAUST-2IODE
    Scopus Count
    Collections
    PhD Dissertations; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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