KAUST DepartmentMaterial Science and Engineering Program
KAUST Solar Center (KSC)
Physical Science and Engineering (PSE) Division
KAUST Grant NumberIED OSR-2019-4208
Embargo End Date2023-08-12
Permanent link to this recordhttp://hdl.handle.net/10754/680256
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AbstractThe Urbach energy is an expression of the static and dynamic disorder in a semiconductor and is directly accessible via optical characterization techniques. The strength of this metric is that it elegantly captures the optoelectronic performance potential of a semiconductor in a single number. For solar cells, the Urbach energy is found to be predictive of a material's minimal open-circuit-voltage deficit. Performance calculations considering the Urbach energy give more realistic power conversion efficiency limits than from classical Shockley-Queisser considerations. The Urbach energy is often also found to correlate well with the Stokes shift and (inversely) with the carrier mobility of a semiconductor. Here, we discuss key features, underlying physics, measurement techniques, and implications for device fabrication, underlining the utility of this metric.
CitationUgur, E., Ledinský, M., Allen, T. G., Holovský, J., Vlk, A., & De Wolf, S. (2022). Life on the Urbach Edge. The Journal of Physical Chemistry Letters, 7702–7711. https://doi.org/10.1021/acs.jpclett.2c01812
SponsorsThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award nos. OSR-CARF/CCF-3079, OSR-CRG2019-4093, OSR-CRG2020-4350, IED OSR-2019-4208, IED OSR-2019-4580, and REI/1/4833-01-01. J.H. acknowledges the Czech Ministry of Education, Youth and Sports grant no. CZ.02.1.01/0.0/0.0/15_003/0000464 (Centre of Advanced Photovoltaics). M.L. and A.V. acknowledge grant no CZ.02.1.01/0.0/0.0/16_026/0008382 (CARAT) and LUASK 22202. M.L., J.H., and A.V. also acknowledge the use of the CzechNanoLab research infrastructure supported by the MEYS (LM2018110).
PublisherAmerican Chemical Society (ACS)
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