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Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes

dc.contributor.authorHamdy, Kareem W.
dc.contributor.authorYoung, Erin C.
dc.contributor.authorAlhassan, Abdullah I.
dc.contributor.authorBecerra, Daniel L.
dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorSpeck, James S.
dc.contributor.authorNakamura, Shuji
dc.date.accessioned2022-06-06T08:43:53Z
dc.date.available2022-06-06T08:43:53Z
dc.date.issued2019-03-18
dc.identifier.citationHamdy, S. W., Young, E. C., Alhassan, A. I., Becerra, D. L., DenBaars, S. P., Speck, J. S., & Nakamura, S. (2019). Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Optics Express, 27(6), 8327. doi:10.1364/oe.27.008327
dc.identifier.issn1094-4087
dc.identifier.doi10.1364/OE.27.008327
dc.identifier.urihttp://hdl.handle.net/10754/678670
dc.description.abstractWe demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.
dc.description.sponsorshipSolid State Lighting and Energy Electronics Center (SSLEEC) at UCSB; KACST-KAUST-UCSB Solid State Lighting Program; National Science Foundation Graduate Research Fellowship Program (NSF GRFP) (1650114); National Science Foundation Materials Research Science and Engineering Centers program (MRSEC) (DMR-1720256); National Science Foundation National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); Advanced Research Projects Agency-Energy (ARPA-E) (DE-AR0000671).
dc.publisherOPTICAL SOC AMER
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?URI=oe-27-6-8327
dc.titleEfficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes
dc.typeArticle
dc.identifier.journalOPTICS EXPRESS
dc.identifier.wosutWOS:000461473400042
dc.contributor.institutionUniv Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
dc.contributor.institutionUniv Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
dc.contributor.institutionKing Abdulaziz City Sci & Technol, Natl Ctr Nanotechno, Riyadh 114426086, Saudi Arabia
dc.identifier.volume27
dc.identifier.issue6
dc.identifier.pages8327-8334
dc.identifier.eid2-s2.0-85063447162
kaust.acknowledged.supportUnitKACST-KAUST-UCSB Solid State Lighting Program


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