Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes
Type
ArticleAuthors
Hamdy, Kareem W.Young, Erin C.
Alhassan, Abdullah I.

Becerra, Daniel L.
DenBaars, Steven P.
Speck, James S.
Nakamura, Shuji
Date
2019-03-18Permanent link to this record
http://hdl.handle.net/10754/678670
Metadata
Show full item recordAbstract
We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.Citation
Hamdy, S. W., Young, E. C., Alhassan, A. I., Becerra, D. L., DenBaars, S. P., Speck, J. S., & Nakamura, S. (2019). Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Optics Express, 27(6), 8327. doi:10.1364/oe.27.008327Sponsors
Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB; KACST-KAUST-UCSB Solid State Lighting Program; National Science Foundation Graduate Research Fellowship Program (NSF GRFP) (1650114); National Science Foundation Materials Research Science and Engineering Centers program (MRSEC) (DMR-1720256); National Science Foundation National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); Advanced Research Projects Agency-Energy (ARPA-E) (DE-AR0000671).Publisher
OPTICAL SOC AMERJournal
OPTICS EXPRESSAdditional Links
https://www.osapublishing.org/abstract.cfm?URI=oe-27-6-8327ae974a485f413a2113503eed53cd6c53
10.1364/OE.27.008327