Name:
Advanced Materials - 2022 - Xue - Integrated memory devices based on two‐dimensional materials (1)_removed.pdf
Size:
5.214Mb
Format:
PDF
Description:
Accepted Manuscript
Type
ArticleKAUST Department
Material Science and EngineeringMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant Number
ORS-2018-CRG7-3717ORS-2019-CRG8-4081
Date
2022-05-12Embargo End Date
2023-05-12Permanent link to this record
http://hdl.handle.net/10754/677915
Metadata
Show full item recordAbstract
With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on the memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfil these demands, two-dimensional (2D) materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D material-based memory device arrays with different working mechanisms including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. In this review, we survey recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing. We discuss the existing challenges at the array level, and present the scope for future research.Citation
Xue, F., Zhang, C., Ma, Y., Wen, Y., He, X., Yu, B., & Zhang, X. (2022). Integrated memory devices based on two-dimensional materials. Advanced Materials, 2201880. Portico. https://doi.org/10.1002/adma.202201880Sponsors
Supported by the King Abdullah University of Science and Technology(KAUST) Office of Sponsored Research (OSR) under award numbers: ORS-2019-CRG8-4081 and ORS-2018-CRG7-3717 and the ZJU-Hangzhou Global Scientific and Technological Innovation Centre.Publisher
WileyJournal
Advanced MaterialsPubMed ID
35557021Additional Links
https://onlinelibrary.wiley.com/doi/10.1002/adma.202201880ae974a485f413a2113503eed53cd6c53
10.1002/adma.202201880
Scopus Count
Related articles
- Circuit-Level Memory Technologies and Applications based on 2D Materials.
- Authors: Ma J, Liu H, Yang N, Zou J, Lin S, Zhang Y, Zhang X, Guo J, Wang H
- Issue date: 2022 Dec
- Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics.
- Authors: Jin T, Mao J, Gao J, Han C, Loh KP, Wee ATS, Chen W
- Issue date: 2022 Sep 27
- Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.
- Authors: Zahoor F, Hussin FA, Isyaku UB, Gupta S, Khanday FA, Chattopadhyay A, Abbas H
- Issue date: 2023 Mar 9
- Emerging 2D Memory Devices for In-Memory Computing.
- Authors: Yin L, Cheng R, Wen Y, Liu C, He J
- Issue date: 2021 Jul
- Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing.
- Authors: Kwon KC, Baek JH, Hong K, Kim SY, Jang HW
- Issue date: 2022 Feb 5