Show simple item record

dc.contributor.authorHuang, Jing-Kai
dc.contributor.authorWan, Yi
dc.contributor.authorShi, Junjie
dc.contributor.authorZhang, Ji
dc.contributor.authorWang, Zeheng
dc.contributor.authorWang, Wenxuan
dc.contributor.authorYang, Ni
dc.contributor.authorLiu, Yang
dc.contributor.authorLin, Chun-Ho
dc.contributor.authorGuan, Xinwei
dc.contributor.authorHu, Long
dc.contributor.authorYang, Zi-Liang
dc.contributor.authorHuang, Bo-Chao
dc.contributor.authorChiu, Ya-Ping
dc.contributor.authorYang, Jack
dc.contributor.authorTung, Vincent
dc.contributor.authorWang, Danyang
dc.contributor.authorKalantar-Zadeh, Kourosh
dc.contributor.authorWu, Tao
dc.contributor.authorZu, Xiaotao
dc.contributor.authorQiao, Liang
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorLi, Sean
dc.date.accessioned2022-05-12T07:24:16Z
dc.date.available2022-05-12T07:24:16Z
dc.date.issued2022-05-11
dc.identifier.citationHuang, J.-K., Wan, Y., Shi, J., Zhang, J., Wang, Z., Wang, W., Yang, N., Liu, Y., Lin, C.-H., Guan, X., Hu, L., Yang, Z.-L., Huang, B.-C., Chiu, Y.-P., Yang, J., Tung, V., Wang, D., Kalantar-Zadeh, K., Wu, T., … Li, S. (2022). High-κ perovskite membranes as insulators for two-dimensional transistors. Nature, 605(7909), 262–267. https://doi.org/10.1038/s41586-022-04588-2
dc.identifier.issn0028-0836
dc.identifier.issn1476-4687
dc.identifier.doi10.1038/s41586-022-04588-2
dc.identifier.urihttp://hdl.handle.net/10754/676863
dc.description.abstractThe scaling of silicon metal–oxide–semiconductor field-effect transistors has followed Moore’s law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents1. Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κ single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D field-effect transistors. Our perovskite membranes exhibit a desirable sub-one-nanometre CET with a low leakage current (less than 10−2 amperes per square centimetre at 2.5 megavolts per centimetre). We find that the van der Waals gap between strontium-titanium-oxide dielectrics and 2D semiconductors mitigates the unfavourable fringing-induced barrier-lowering effect resulting from the use of ultrahigh-κ dielectrics4. Typical short-channel transistors made of scalable molybdenum-disulfide films by chemical vapour deposition and strontium-titanium-oxide dielectrics exhibit steep subthreshold swings down to about 70 millivolts per decade and on/off current ratios up to 107, which matches the low-power specifications suggested by the latest International Roadmap for Devices and Systems5.
dc.description.sponsorshipWe thank the Australian Research Council Discovery Project of DP19010366 for the financial support; the facilities, as well as the scientific and technical assistance, of the NSW Node of the Australian National Fabrication Facility (ANFF) and the Research and Prototype Foundry Core Research Facility at the University of Sydney, part of the ANFF; and the units and facilities within the Mark Wainwright Analytical Centre at UNSW Sydney for the assistance in material analyses. Z.W. thanks L.Li in Peking University for providing assistance in the TCAD simulation; L.-J.L. and Y.W. thank the support from the University of Hong Kong; and Y.-P.C. acknowledges the financial support from Ministry of Science and Technology (MOST) of Taiwan (contract numbers MOST 110-2119-M-002-015-MBK and MOST 110-2622-8-002-014).
dc.publisherSpringer Science and Business Media LLC
dc.relation.urlhttps://www.nature.com/articles/s41586-022-04588-2
dc.rightsArchived with thanks to Nature
dc.titleHigh-κ perovskite membranes as insulators for two-dimensional transistors
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.identifier.journalNature
dc.rights.embargodate2022-11-11
dc.eprint.versionPost-print
dc.identifier.volume605
dc.identifier.issue7909
dc.identifier.pages262-267
kaust.personTung, Vincent


Files in this item

Thumbnail
Name:
408862_0_art_file_3735500_qyr62g.pdf
Size:
2.130Mb
Format:
PDF
Description:
Accepted Manuscript
Embargo End Date:
2022-11-11
Thumbnail
Name:
41586_2022_4588_MOESM1_ESM.pdf
Size:
1.207Mb
Format:
PDF
Description:
Supplementary material
Embargo End Date:
2022-11-11

This item appears in the following Collection(s)

Show simple item record