High-κ perovskite membranes as insulators for two-dimensional transistors
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
Embargo End Date2022-11-11
Permanent link to this recordhttp://hdl.handle.net/10754/676863
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AbstractThe scaling of silicon metal–oxide–semiconductor field-effect transistors has followed Moore’s law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents1. Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κ single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D field-effect transistors. Our perovskite membranes exhibit a desirable sub-one-nanometre CET with a low leakage current (less than 10−2 amperes per square centimetre at 2.5 megavolts per centimetre). We find that the van der Waals gap between strontium-titanium-oxide dielectrics and 2D semiconductors mitigates the unfavourable fringing-induced barrier-lowering effect resulting from the use of ultrahigh-κ dielectrics4. Typical short-channel transistors made of scalable molybdenum-disulfide films by chemical vapour deposition and strontium-titanium-oxide dielectrics exhibit steep subthreshold swings down to about 70 millivolts per decade and on/off current ratios up to 107, which matches the low-power specifications suggested by the latest International Roadmap for Devices and Systems5.
CitationHuang, J.-K., Wan, Y., Shi, J., Zhang, J., Wang, Z., Wang, W., Yang, N., Liu, Y., Lin, C.-H., Guan, X., Hu, L., Yang, Z.-L., Huang, B.-C., Chiu, Y.-P., Yang, J., Tung, V., Wang, D., Kalantar-Zadeh, K., Wu, T., … Li, S. (2022). High-κ perovskite membranes as insulators for two-dimensional transistors. Nature, 605(7909), 262–267. https://doi.org/10.1038/s41586-022-04588-2
SponsorsWe thank the Australian Research Council Discovery Project of DP19010366 for the financial support; the facilities, as well as the scientific and technical assistance, of the NSW Node of the Australian National Fabrication Facility (ANFF) and the Research and Prototype Foundry Core Research Facility at the University of Sydney, part of the ANFF; and the units and facilities within the Mark Wainwright Analytical Centre at UNSW Sydney for the assistance in material analyses. Z.W. thanks L.Li in Peking University for providing assistance in the TCAD simulation; L.-J.L. and Y.W. thank the support from the University of Hong Kong; and Y.-P.C. acknowledges the financial support from Ministry of Science and Technology (MOST) of Taiwan (contract numbers MOST 110-2119-M-002-015-MBK and MOST 110-2622-8-002-014).
PublisherSpringer Science and Business Media LLC